HardOCP News
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Researchers from North Carolina State University have developed a new device that they claim will revolutionize computer memory and make computers start more quickly. Here's the explanation:
“We’ve invented a new device that may revolutionize computer memory,” says Dr. Paul Franzon, a professor of electrical and computer engineering at NC State and co-author of a paper describing the research. “Our device is called a double floating-gate field effect transistor (FET). Existing nonvolatile memory used in data storage devices utilizes a single floating gate, which stores charge in the floating gate to signify a 1 or 0 in the device – or one ‘bit’ of information. By using two floating gates, the device can store a bit in a nonvolatile mode, and/or it can store a bit in a fast, volatile mode – like the normal main memory on your computer.”