Late last year, EE Times published a report claiming that Intel was already shipping MRAM products to undisclosed customers. At the time, Intel only confirmed that their MRAM was "production ready" and didn't elaborate any further. But now, the news outlet says that Intel presented a paper on their embedded MRAM at the International Solid-State Circuits Conference. The fast, non-volatile 7Mb memory arrays reportedly achieve "10-year retention at 200C" and have "demonstrated write endurance of more than 1E06 cycles and read disturb error rate of more than 1E12 cycles." While EE Times calls the 22FFL process the MRAM arrays are built on a "22nm" process, semantics in the world of semiconductors are fuzzy, and Wikichip believes that 22FFL actually has more in common with Intel's 14nm processes. "Analysts" still believe that Intel is shipping products with MRAM, but the chip company hasn't elaborated on any of them yet. According to Intel's ISSCC paper, each 0.0486-um2 transistor to one magnetic tunnel junction (1T1MTJ) MRAM bit cell is 216 x 225 nm2, with two polysilicon word lines. The tunnel-magneto-resistance ratio of the MTJs is 180% at 25C, with a target device-critical dimension between 60 nm and 80 nm. Wei said that the eMRAM design is also tolerant of wide variations in supply voltage. The design achieves a 4-ns read sensing time at 0.9 V but is also capable of 8-ns read sensing time at 0.8 V, she said... In a separate ISSCC paper presented Tuesday, Intel also described the development of resistive RAM (ReRAM) as a low-cost option for embedded non-volatile memory for SoCs used in IoT and automotive. The embedded ReRAM technology - also implemented in a 22-nm FinFET process - demonstrate what the company says is the smallest and highest-density ReRAM subarray and material innovations to allow low-voltage switching without impact to transistor reliability.