I have a question that i have been thinking about (hope this is in the right section)
What is harder to make? DRAM, NAND or logic (i.e CPUs, etc)
The ITRS uses DRAM half pitch for its projections, but if you look at 2012, it calls for a half pitch of 32nm.
Intel has been using the 32nm process for almost two years (logic) and is about to start shipping 22nm devices. TSMC has 28nm parts.
Samsung has been using 3xnm process technology for maybe a year. Elpida/Hynix has been mass producing it for maybe a year or two.
Then comes flash. In early 2010, IMFT announced their 25nm 64 Gb NAND. Recently, they talked about 20nm flash. Toshiba/Sandisk has had 24nm NAND for a while now and have talked about transitioning to 19nm.
So from the process side, what is harder to make? And would the tool sets between a logic and memory fab be significantly different?
What is harder to make? DRAM, NAND or logic (i.e CPUs, etc)
The ITRS uses DRAM half pitch for its projections, but if you look at 2012, it calls for a half pitch of 32nm.
Intel has been using the 32nm process for almost two years (logic) and is about to start shipping 22nm devices. TSMC has 28nm parts.
Samsung has been using 3xnm process technology for maybe a year. Elpida/Hynix has been mass producing it for maybe a year or two.
Then comes flash. In early 2010, IMFT announced their 25nm 64 Gb NAND. Recently, they talked about 20nm flash. Toshiba/Sandisk has had 24nm NAND for a while now and have talked about transitioning to 19nm.
So from the process side, what is harder to make? And would the tool sets between a logic and memory fab be significantly different?
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