Samsung Starts Mass Producing Industry’s First 10-Nanometer Class DRAM

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Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 10-nanometer (nm) class* , 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and the modules derived from them. DDR4 is quickly becoming the most widely produced memory for personal computers and IT networks in the world, and Samsung’s latest advancement will help to accelerate the industry-wide shift to advanced DDR4 products.

Samsung opened the door to 10nm-class* DRAM for the first time in the industry after overcoming technical challenges in DRAM scaling. These challenges were mastered using currently available ArF (argon fluoride) immersion lithography, free from the use of EUV (extreme ultra violet) equipment. Samsung’s roll-out of the 10nm-class (1x) DRAM marks yet another milestone for the company after it first mass produced 20-nanometer (nm)** 4Gb DDR3 DRAM in 2014.
 
Nice hype...read the fine print

20nm class means 20-29nm
10nm class means 10-19nm

What they did here was go from 20nm to either 18, 14, or 12. The first would not be a disappointing jump. The second an expected development. It's not until you get to 12nm and below they would be doing something impressive. But the press release title makes it sound like they went from 20nm->10nm in 2 years.
 
Hypergreatthing said:
is it faster or more dense (more gigs on the dimm) or just smaller chips?
Click to expand...

You were just one click away from having all the answers.


Samsung’s leading-edge 10nm-class 8Gb DDR4 DRAM significantly improves the wafer productivity of 20nm 8Gb DDR4 DRAM by more than 30 percent.

The new DRAM supports a data transfer rate of 3,200 megabits per second (Mbps), which is more than 30 percent faster than the 2,400Mbps rate of 20nm DDR4 DRAM. Also, new modules produced from the 10nm-class DRAM chips consume 10 to 20 percent less power, compared to their 20nm-process-based equivalents, which will improve the design efficiency of next-generation, high-performance computing (HPC) systems and other large enterprise networks, as well as being used for the PC and mainstream server markets.
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AWESOMESAUCE!!!
 
Jim Kim said:
You were just one click away from having all the answers.


Samsung’s leading-edge 10nm-class 8Gb DDR4 DRAM significantly improves the wafer productivity of 20nm 8Gb DDR4 DRAM by more than 30 percent.

The new DRAM supports a data transfer rate of 3,200 megabits per second (Mbps), which is more than 30 percent faster than the 2,400Mbps rate of 20nm DDR4 DRAM. Also, new modules produced from the 10nm-class DRAM chips consume 10 to 20 percent less power, compared to their 20nm-process-based equivalents, which will improve the design efficiency of next-generation, high-performance computing (HPC) systems and other large enterprise networks, as well as being used for the PC and mainstream server markets.
​
AWESOMESAUCE!!!
Click to expand...

Reversing the power law requirements based on speed is showing that leakage is starting to really take a toll on efficiency. These numbers are actually NOT a good thing. (While an improvement)

It's like saying the Veyron went from 1000 HP to 1200HP in the super sport. Okay what's the top speed increase? ~5MPH.
 
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