HardOCP News
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Samsung Electronics has announced that it has developed 4GB DDR2 DIMMs using "through silicon via" or TSV technology. According to the article, the new wafer-level-processed stacked package eliminates the need for gaps and wires protruding beyond the sides of the dies by using laser-cut micron-sized holes that penetrate the silicon vertically to connect the memory circuits directly with a copper filling.
The new wafer-level-processed stacked package (WSP) consists of four 512Mb DDR2 chips that offer a combined 2Gb of high density memory. Using the TSV-processed 2Gb DRAMs, Samsung can create a 4GB DIMM.