Samsung’s 4GB DIMMs Use Stacking Technology

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Samsung Electronics has announced that it has developed 4GB DDR2 DIMMs using "through silicon via" or TSV technology. According to the article, the new wafer-level-processed stacked package eliminates the need for gaps and wires protruding beyond the sides of the dies by using laser-cut micron-sized holes that penetrate the silicon vertically to connect the memory circuits directly with a copper filling.

The new wafer-level-processed stacked package (WSP) consists of four 512Mb DDR2 chips that offer a combined 2Gb of high density memory. Using the TSV-processed 2Gb DRAMs, Samsung can create a 4GB DIMM.
 
I am curious if any current gen ``desktop'' boards even support DIMMs with more than 2GiB.
 
yes the Asus commando for one, but I am sure just about any motherboard supporting a 64bit processor could.
 
Sounds like one hot memory stick to me. I can't imagine these being cheap.
 
Last time I purchased stacked chip DIMMs they were really expensive, I don't think this will really reduce costs.
 
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