http://phys.org/news/2014-03-samsung-mass-advanced-4gb-ddr3.html
Too bad we're unlikely to ever see it in 240 pin DIMMs.
With the new 20nm DDR3 DRAM applying these technologies, Samsung also has improved manufacturing productivity, which is over 30 percent higher than that of the preceding 25 nanometer DDR3, and more than twice that of 30nm-class* DDR3.
In addition, the new 20nm 4Gb DDR3- based modules can save up to 25 percent of the energy consumed by equivalent modules fabricated using the previous 25 nanometer process technology. This improvement provides the basis for delivering the industry's most advanced green IT solutions to global companies.
Too bad we're unlikely to ever see it in 240 pin DIMMs.