Samsung b-die RAM Overclocking

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Xero717

Weaksauce
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Feb 28, 2011
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I have a set of 32GB (2x16GB) dual-sided Samsung b-die sticks I'm trying to overclock. Right now they're sitting at 3200 14-14-14-34 2T 1.36v. I was able to boot into windows at 3400 14-14-14-34 2T 1.37v, but memtest gave an error, so I'm wondering what should be the first thing I consider going forward? Increasing voltage, or loosening timings?

I don't want to loosen timings too much, but I would like to up the speed a bit in preparation for Ryzen 3. Current CPU is an i7-8086k on a Maximus X Apex.
 
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Try 1.4v first? Have good case airflow? People can post up to 3600mhz @ 1.44v based on what I've read about the Samsung B dies.
 
16gb modules are harder to clock overall but you should still be able to hit 36-3800 c16 or 17 without needing much added voltage. GL!
 
Yeah I've heard that. I did find stability at 3400 14-14-14-34 2T with 1.39v. May try 1.38v or push for 3600, think that should be a sweet spot for an 8086k.
 
Set voltage as high as you are prepared to go and loosen the timings a lot. tRFC as well, set it to 600
Push MHz up until you hit the ceiling.
Reduce timings as low as they will go while remaining rock stable.

You may need to tweak VCCSA and VCCIO depending what it they are already set to and if you are struggling.
A high CPU overclock may limit how high the ram will clock and vice versa.

My D dies (4x4GB) clock to 3733MHz C17 @ 1.44V.
I had them running at 3866MHz @ 1.52V.
 
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I thought 1.5v was the top. Don't most boards bump the dram voltage to that when you enable XMP? If so you have a lot of room left voltage wise.
 
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