AlphaAtlas
[H]ard|Gawd
- Joined
- Mar 3, 2018
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Today, Samsung announced that smartphones with 1TB of flash storage are just over the horizon. While smaller companies like Smartisan have technically have technically beaten Samsung to the punch, the Korean tech giant says their fifth generation V-NAND now allows them to cram 1TB of storage into a single eUFS 2.1 package. Samsung also notes that their 1TB eUFS package is "exceptionally" fast, with sequential and random specifications that are closer to a desktop NVMe SSD than smartphone with eMMC storage. While 1TB storage configurations should be possible in current phones with upcoming 512GB microSD cards, even the fastest cards are at least an order of magnitude slower than Samsung's new eUFS module.
The 1TB eUFS also possesses exceptional speed, allowing users to transfer large amounts of multimedia content in significantly reduced time. At up to 1,000 megabytes per second (MB/s), the new eUFS features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD). This means that 5GB-sized full HD videos can be offloaded to an NVMe SSD in as fast as five seconds, which is 10 times the speed of a typical microSD card. Furthermore, the random read speed has increased by up to 38 percent over the 512GB version, clocking in at up to 58,000 IOPS. Random writes are 500 times faster than a high-performance microSD card (100 IOPS), coming in at up to 50,000 IOPS. The random speeds allow for high-speed continuous shooting at 960 frames per second and will enable smartphone users to take full advantage of the multi-camera capabilities in today and tomorrow’s flagship models.
The 1TB eUFS also possesses exceptional speed, allowing users to transfer large amounts of multimedia content in significantly reduced time. At up to 1,000 megabytes per second (MB/s), the new eUFS features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD). This means that 5GB-sized full HD videos can be offloaded to an NVMe SSD in as fast as five seconds, which is 10 times the speed of a typical microSD card. Furthermore, the random read speed has increased by up to 38 percent over the 512GB version, clocking in at up to 58,000 IOPS. Random writes are 500 times faster than a high-performance microSD card (100 IOPS), coming in at up to 50,000 IOPS. The random speeds allow for high-speed continuous shooting at 960 frames per second and will enable smartphone users to take full advantage of the multi-camera capabilities in today and tomorrow’s flagship models.
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