Some had claimed that the yield of the 10nm FinFET process was no good, but Samsung is dispelling those rumors with a press release that claims everything is perfectly swell and on track despite earlier delays. This is great news for 10nm tech that includes Qualcomm’s Snapdragon 835 SoC and Samsung’s own Exynos 8895 chip. The company has already shipped 70,000 silicon wafers of its 10nm LPE (low power early). Thanks to Kyle for this one. Samsung Electronics, a world leader in advanced semiconductor technology, announced today that its production ramp-up of the 10-nanometer (nm) FinFET process technology is on track with steady high yield to meet customer needs on schedule. Samsung has shipped more than 70,000 silicon wafers of its first-generation 10nm LPE (Low Power Early) to date. The company began the industry’s first mass production of 10LPE last October. Back in 2015, Samsung introduced the industry’s first 14nm FinFET LPE technology for mobile applications based on 3D FinFET structure. Since then, Samsung has successfully delivered further enhancements in power, performance and scalability for both 14nm and 10nm FinFET technology.