HardOCP News
[H] News
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- Dec 31, 1969
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GLOBALFOUNDRIES today announced plans to deliver a new leading-edge 7nm FinFET semiconductor technology that will offer the ultimate in performance for the next era of computing applications. This technology provides more processing power for data centers, networking, premium mobile processors, and deep learning applications. GLOBALFOUNDRIES’ new 7nm FinFET technology is expected to deliver more than twice the logic density and a 30 percent performance boost compared to today’s 16/14nm foundry FinFET offerings. The platform is based on an industry-standard FinFET transistor architecture and optical lithography, with EUV compatibility at key levels. This approach will accelerate the production ramp through significant re-use of tools and processes from the company’s 14nm FinFET technology, which is currently in volume production at its Fab 8 campus in Saratoga County, N.Y. GLOBALFOUNDRIES plans to make an additional mutli-billion dollar investment in Fab 8 to enable development and production for 7nm FinFET.