Intel, Micron Introduce of World's First 128Gb NAND Device

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Intel and Micron Technology, Inc., today announced a new benchmark in NAND flash technology - the world's first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced mass production of their 64Gb 20nm NAND, which further extends the companies' leadership in NAND process technology.

Developed through Intel and Micron's joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies' existing 20nm 64Gb NAND device.
 
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Lots of good things have been coming out of this Intel / Micron partnership lately. Nice to hear companies working together rather than just suing each other to death!
 
FireBean said:
I wonder why they don't just make one massive nand chip :D
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Because of yields. If you've got 8 smaller chips and 2 have fatal defects, you still have 6 good ones. If you have one big chip with the same capacity, the same number of defects ruins the whole chip.
 
Why don't they release single level cell SSD? 20nm SSD won't last very long.
 
Before long we'll have 1TB USB flash drives, 128GB MicroSD and 2TB SSD...
 
Flyboat said:
Why don't they release single level cell SSD? 20nm SSD won't last very long.
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The "wear-leveling" algorithms (not sure if that's the exact name, it's late and I'm tired) should keep the lifespan much longer than a mechanical drive's. In theory, anyway.
 
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