Intel’s Tri-Gate Transistor Named “Semiconductor Innovation of the Year”

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The Wall Street Journal's Technology Innovation Awards named Intel's Tri-Gate transistor the semiconductor innovation of the year. Award criteria included breaking with conventional processes in the field and having wide impact on its field or on future technology.For the first time since the invention of silicon transistors over 50 years ago, transistors using a 3-D structure will be put into high-volume manufacturing. Tri-Gate transistors will go into production by the end of this year in an Intel chip codenamed "Ivy Bridge."
 
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